基本信息

姓   名：胡小会

性   别：女

籍   贯：江苏沛县

职   称：副教授、硕导

电子邮箱：xiaohui.hu@njtech.edu.cn

办公地点：润德楼B321

学缘与工作经历

2016–至今，南京工业大学，365上市集团官网，副教授

2014–2016，东南大学，物理学院，博士后

2013–2014，芬兰阿尔托大学，应用物理系，访问学者

2009–2014，东南大学，电子科学与工程学院，博士

教学与科研简介

承担材料科学与工程专业《固体物理》、《材料科学前沿专题》、《认识实习》等课程教学，主持教育部产学合作协同育人项目1项，校级教改项目1项，发表教改论文2篇。获批《固体物理》校级一流课程、在线开放课程及本科课程思政示范课程。获评校级教学竞赛一等奖、本科生毕业论文优秀指导教师、本科生优秀毕业设计（论文）团队。

主要从事二维半导体材料的结构设计、性能和器件原理的研究。主持国家自然科学基金青年基金、江苏省自然科学基金青年基金、中国博士后科学基金面上项目、江苏省博士后科研资助项目、教育部重点实验室开放课题、芬兰教育部基金等10余项国家级省部级课题。在NanoscaleHoriz.、Chem. Eng. J.、ACS Appl. Mater. Interfaces、J. Phys. Chem. Lett.、J. Mater. Chem. A等期刊发表论文80余篇，获授权专利2项。

代表性论文

[1]W. Ai,X. Hu^, T. Xu, J. Yang^, and L. Sun, Dipole-induced Transition from Schottky to Ohmic Contact between Janus MoSiGeN₄and Bulk metals.NanoscaleHoriz.2025, 10, 635–646.

[2]Y. Hu,X. Hu^, Y. Wang, C. Lu, A. V.Krasheninnikov, Z. Chen, and L. Sun, Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX₃(X = I, Br)/2D Metal Contacts.J. Phys. Chem. Lett.2023, 14, 2807–2815.

[3]Q. Yang,X. Hu^, X. Shen, A. V.Krasheninnikov, Z. Chen, and L. Sun, Enhancing Ferromagnetism and Tuning Electronic Properties of CrI₃Monolayers by Adsorption of Transition-Metal Atoms.ACS Appl. Mater. Interfaces,2021, 13, 21593–21601.

[4]X. Hu^, Y. Zhao, X. Shen, A. V.Krasheninnikov, Z. Chen^, and L. Sun^, Enhanced Ferromagnetism and Tunable Magnetism in Fe₃GeTe₂Monolayer by Strain Engineering.ACS Appl. Mater. Interfaces,2020, 12, 26367–26373.

[5]Y. Ji, X. Zhang, W. Ai,Z. He, S. Lou, Z. Tang, F. Hang, Z. Liu, Y. Ou^,X. Hu^*,and P. Zong^, Intercalation-Deintercalation Engineering of Van der Waals StackedMXeneFilms for WearableThermoelectricsand Sensing.Chem. Eng. J.2025, 512, 162603.

[6]Y. Gu, W. Ai, J. Chen, A. Zhao,X. Hu^, P. Zong, L. Pan, C. Lu, C. Wan^, and Y. Wang^, Cellular Structured Cu₂Sn_0.8Co_0.2S₃with Enhanced Thermoelectric Performance Realized by Liquid-phase Sintering.J. Mater. Chem. A,2023, 11, 1447–1454.

[7]Y. Gu, W. Ai, Y. Zhao, L. Pan, C. Lu, P. Zong,X. Hu^, Z. Xu, and Y. Wang^, Remarkable Thermoelectric Property Enhancement in Cu₂SnS₃-CuCo₂S₄Nano Composites via 3D Modulation Doping.J. Mater. Chem. A,2021, 9, 16928–16935.

[8]X. Hu^, Y. Wang, X. Shen, A.Krasheninnikov, L. Sun^, and Z. Chen^, 1T Phase as an Efficient Hole Injection Layer to TMDs Transistors: a Universal Approach to Achieve p-type Contacts.2D Mater.2018, 5, 031012.

[9]Z. Huang,X. Hu^, T. Xu, and L. Sun, Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe₂P₄-Metal Contacts.ACS Appl. Electron. Mater.2024, 6, 2019–2025.

[10] W. Ai, Y. Shi,X. Hu^, J. Yang^,and L. Sun, Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi₂N₄(M = Mo, W)/2D Metal Contacts.ACS Appl. Electron. Mater.2023,5, 5606–5613.

授权发明专利

[1]一种二维半导体材料SnSe₂单晶的制备方法，专利号：ZL202110146498.2

[2]具有光催化特性的ZnO纳米片/纳米线复合结构及制法，专利号：ZL201110039092.0